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SIM-20ST
Sensors
Infrared light emitting diode, side-view type
SIM-012SB
The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ 1.85 lens.
Applications
Light source for sensors
Dimensions (Unit : mm)
4.3 ± 0.1
Notes:
1. Tolerances are ± 0.2 unless
otherwise indicated.
Features
1) Compact package (4.4x4.3 mm) with lens.
2) High efficiency, high output P O = 7mW (I F = 50 mA).
3) Emission spectrum well suited to silicon detectors
( λ P = 950 nm).
3.9 ± 0.1
2.0
0.5
2. Value in parenthese is size
at base of leads.
0.4
0.53
4) Good current-optical output linearity.
5) Long life, high reliability.
Absolute maximum ratings (Ta=25 ° C)
Resin coating
(2.54)
0.45
1 Cathode
0.4
2 Anode
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I F
V R
P D
I FP ?
Topr
Tstg
Limits
50
5
80
0.5
? 25 to +85
? 30 to +100
Unit
mA
V
mW
A
° C
° C
? Pulse width = 0.1 ms, duty ratio 1%
Electrical and optical characteristics (Ta=25 ° C)
Parameter
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Symbol
I E
V F
I R
λ P
?λ
θ 1/2
tr ? tf
fc
Min.
?
?
?
?
?
?
?
?
Typ.
7.5
1.3
?
950
40
± 15
1.0
1.0
Max.
?
1.6
10
?
?
?
?
?
Unit
mW/sr
V
μ A
nm
nm
deg
μ s
MHz
I F ＝ 50mA
I F ＝ 50mA
V R ＝ 3V
I F ＝ 50mA
I F ＝ 50mA
I F ＝ 50mA
I F ＝ 50mA
I F ＝ 50mA
Conditions
Rev.A
1/2
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